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    2003 Dec 12 3 NXP Semiconductors Product data sheet Low-leakage diode BAS116 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA ? 0.9 V IF = 10 mA ? 1 V IF = 50 mA ? 1.1 V IF = 150 mA ? 1.25 V IR reverse current see Fig.5 VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 ? pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ?; measured at IR = 1 mA; see Fig.7 0.8 3 μs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-tp) thermal resistance from junction to tie-point 330 K/W Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W |